| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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45,020 pcs
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45020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,804 pcs
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1804 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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800 pcs
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800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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35 pcs
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35 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The FDB0170N607L is an N-channel power MOSFET from ON Semiconductor, designed for high-current switching applications. It features a drain-source voltage rating of 60V and a continuous drain current of 300A at case temperature. The device achieves a low on-resistance of 1.4 mOhm maximum at 39A drain current and 10V gate drive, minimizing conduction losses.
With a gate charge of 243 nC at 10V and an input capacitance of 19250 pF at 30V, this MOSFET is suitable for high-frequency switching. The operating junction temperature range is -55°C to 175°C, supporting demanding thermal environments.
Packaged in a surface-mount TO-263-7 (D²Pak with 6 leads and tab), the FDB0170N607L is offered as RoHS3 compliant. This component is intended for use in power supplies, motor drives, and other high-current power management circuits.
The drain-source voltage rating is 60 V.
The package is TO-263-7, D²Pak with 6 leads and tab, surface mount.
The operating junction temperature range is -55°C to 175°C.
The component is marked as RoHS3 compliant, but this status is unverified.
The maximum continuous drain current is 300 A at case temperature.
The maximum drain-source on-resistance is 1.4 mOhm at 39 A drain current and 10 V gate voltage.
The maximum total gate charge is 243 nC at 10 V gate voltage.