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FDB016N04AL7 FDB016N04AL7 is an N-Channel power MOSFET from On Semiconductor with a 40V drain-source voltage rating and 160A continuous drain current. It features a low 1.6 mOhm maximum on-resistance at 10V gate drive.
Mfr Part #:

FDB016N04AL7

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDB016N04AL7 is an N-Channel power MOSFET from On Semiconductor with a 40V drain-source voltage rating and 160A continuous drain current. It features a low 1.6 mOhm maximum on-resistance at 10V gate drive.
✓ Total Stock: 3,915 pcs

FDB016N04AL7 Available from 1 distributor

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FDB016N04AL7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDB016N04AL7 Description

Short technical summary and product information.

The FDB016N04AL7 is an N-Channel power MOSFET manufactured by On Semiconductor, designed for high-efficiency power switching applications. It is rated for a maximum drain-source voltage of 40V and a continuous drain current of 160A at case temperature (Tc). The device achieves a very low maximum on-resistance of 1.6 mOhm at Vgs=10V and Id=80A, enabling reduced conduction losses.

 

This MOSFET is housed in a surface-mount TO-263-7 (D²Pak with 6 leads plus tab) package, suitable for automated assembly processes. It supports a gate drive voltage of 10V and has a maximum gate threshold voltage of 3V at Id=250µA. The input capacitance is 11600 pF at Vds=25V, and the total gate charge is 167 nC at Vgs=10V, providing moderate switching performance.

 

The device can dissipate up to 283W at case temperature and operates over a junction temperature range of -55°C to 175°C. It is designed for use in power management circuits, DC-DC converters, motor drives, and other high-current switching applications where low on-resistance and high efficiency are critical.

FDB016N04AL7 Quick Information

Product Type: Power MOSFET
Canonical Name: FDB016N04AL7 N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

FDB016N04AL7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB016N04AL7 Features

  • N-Channel MOSFET with 40V drain-source voltage.
  • 160A continuous drain current at Tc.
  • 1.6 mOhm maximum on-resistance at 10V.
  • Surface-mount TO-263-7 package.
  • Operating temperature range -55°C to 175°C.

FDB016N04AL7 Applications

  • High-efficiency DC-DC converter circuits.
  • Motor drive and power management systems.
  • Load switching and battery protection.
  • Synchronous rectification in power supplies.

FDB016N04AL7 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDB016N04AL7?

The maximum drain-source voltage is 40 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 160 A at case temperature (Tc).

What is the on-resistance of this MOSFET?

The maximum drain-source on-resistance is 1.6 mOhm at Vgs=10V and Id=80A.

What package does the FDB016N04AL7 use?

It uses a TO-263-7, D²Pak (6 Leads + Tab) surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the FDB016N04AL7 RoHS compliant?

The part is listed as RoHS3 Compliant, but this information is unverified.

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