| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB0165N807L is an N-Channel power MOSFET from ON Semiconductor designed for high-current switching applications. It features a drain-source voltage rating of 80V and a continuous drain current of 310A at case temperature. The device achieves an ultra-low on-resistance of 1.6mOhm maximum at 36A drain current and 10V gate drive, minimizing conduction losses.
Key electrical characteristics include a maximum gate charge of 304nC at 10V and an input capacitance of 23660pF at 40V drain-source voltage. The gate threshold voltage is 4V maximum at 250µA, and the gate-source voltage range is ±20V. Power dissipation is rated at 300W at case temperature and 3.8W at ambient.
The MOSFET is housed in a surface-mount TO-263-7 (D²Pak with 6 leads plus tab) package, suitable for automated assembly. It operates over a junction temperature range of -55°C to 175°C, making it robust for demanding environments.
80V.
TO-263-7, D²Pak (6 Leads + Tab) surface mount package.
-55°C to 175°C (junction).
RoHS3 compliant (unverified).
Maximum 4V at 250µA drain current.
±20V.
310A at case temperature.