Mfr Part #:

FDB0105N407L

N-Channel MOSFET with 40V drain-source voltage and 460A continuous drain current. Features low on-resistance of 0.8mOhm at 50A, 10V.

✓ Total Stock: 3,200 pcs

FDB0105N407L Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	3,200 pcs On Request	3200 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDB0105N407L Description

Short technical summary and product information.

The FDB0105N407L is an N-Channel power MOSFET manufactured by ON Semiconductor, utilizing MOSFET (Metal Oxide) technology. It is rated for a drain-source voltage of 40V and a continuous drain current of 460A at case temperature. This MOSFET is designed for high-current switching applications.

Key electrical specifications include a maximum on-resistance of 0.8 mOhm at 50A drain current and 10V gate-source voltage. The gate threshold voltage (maximum) is 4V at 250µA. Total gate charge is 291 nC at 10V, and input capacitance is 23100 pF at 20V drain-source. The drive voltage for achieving minimum and maximum on-resistance is 6V and 10V, respectively. The maximum gate-source voltage is ±20V.

The device is surface mountable and comes in a TO-263-7 package (D²Pak with 6 leads and tab). It can dissipate up to 3.8W at ambient temperature and 300W at case temperature. The operating junction temperature range is -55°C to 175°C.

Typical applications include power management, high-current switching, synchronous rectification, and DC-DC converters. The low on-resistance and high current rating make it suitable for demanding power conversion circuits.

FDB0105N407L Quick Information

Product Type: MOSFET

Canonical Name: FDB0105N407L - N-Channel Power MOSFET, 40V, 460A, TO-263-7

Subcategory: N-Channel MOSFET

FDB0105N407L Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FDB0105N407L Features

N-Channel MOSFET with 40V drain-source voltage.
Continuous drain current of 460A at case temperature.
Low on-resistance of 0.8 mOhm at 50A, 10V.
Gate charge of 291 nC at 10V gate-source voltage.
Surface mount TO-263-7 package for high power dissipation.

FDB0105N407L Applications

Suitable for high current power switching applications.
Used in industrial and automotive power management.
Ideal for synchronous rectification and DC-DC converters.
Applicable in motor control and inverter circuits.

FDB0105N407L FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

40V.

What is the continuous drain current?

460A at case temperature.

What is the maximum on-resistance?

0.8 mOhm at 50A drain current and 10V gate-source voltage.

What is the gate threshold voltage?

Maximum 4V at 250µA drain current.

What is the operating temperature range?

-55°C to 175°C (junction temperature).

What is the package type?

TO-263-7 (D²Pak with 6 leads and tab).

Is the component RoHS compliant?

RoHS3 compliant (unverified).

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	460 A (Tc)
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	291 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	23100 pF @ 20 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	3.8 W (Ta), 300 W (Tc)
Rds On (Max) @ Id, Vgs	0.8 mOhm @ 50 A, 10 V
Supplier Device Package	TO-263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4 V @ 250 µA