| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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33,225 pcs
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33225 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDA8440 is an N-Channel MOSFET designed by On Semiconductor for high-current switching applications. It features a drain-source voltage rating of 40V and a maximum continuous drain current of 100A at case temperature (Tc=25°C) or 30A at ambient temperature (Ta=25°C). The device offers a low drain-source on-resistance of 2.1mOhm (maximum at 80A, 10V gate drive), enabling high efficiency in power conversion circuits.
Key electrical characteristics include a maximum input capacitance of 24740pF at Vds=25V and a gate charge of 450nC at Vgs=10V, which inform switching performance. The gate threshold voltage is 3V maximum at Id=250µA, and the gate-source voltage rating is ±20V. The power dissipation is rated at 306W maximum at Tc=25°C, with an operating junction temperature range of -55°C to 175°C.
The MOSFET is supplied in a through-hole TO-3P-3 / SC-65-3 package, with the supplier device package designated as TO-3PN. This package is suitable for applications requiring robust heat dissipation and mechanical mounting. The device is marked as RoHS3 compliant (unverified), MSL level 1 unlimited, and REACH unaffected.
40V.
100A at case temperature (Tc=25°C) and 30A at ambient temperature (Ta=25°C).
2.1mOhm maximum at Id=80A and Vgs=10V.
The part is supplied in a through-hole TO-3P-3 / SC-65-3 package, with the supplier device package TO-3PN.
-55°C to 175°C (junction temperature).
The data indicates RoHS3 compliant, but this has not been verified (low confidence).
450nC maximum at Vgs=10V.