| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FDA70N20 is an N-Channel MOSFET manufactured by ON Semiconductor. It is designed for high-power switching applications, offering a drain-source voltage of 200V and a continuous drain current of 70A at case temperature. The device features a maximum drain-source on-resistance of 35mOhm at a gate drive of 10V and a drain current of 35A, enabling efficient power conversion.
With a maximum gate charge of 86nC and input capacitance of 3970pF, the FDA70N20 provides predictable switching performance. The gate threshold voltage is specified at a maximum of 5V, and the maximum gate-source voltage is ±30V. The device can dissipate up to 417W of power at case temperature, making it suitable for demanding thermal environments.
The FDA70N20 is housed in a TO-3P-3 (SC-65-3) package with a supplier device package of TO-3PN, and is designed for through-hole mounting. It operates over a junction temperature range of -55°C to 150°C, ensuring reliable operation in a wide range of conditions. This MOSFET is suitable for power supply, motor control, and other high-current switching applications.
The maximum drain-source voltage is 200V.
The maximum drain current is 70A at case temperature (Tc).
The maximum on-resistance is 35mOhm at a drain current of 35A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 150°C.
The FDA70N20 is available in a TO-3P-3 (SC-65-3) package, with a supplier device package of TO-3PN.
The FDA70N20 is listed as RoHS3 compliant, though this is unverified from the datasheet.