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FDA59N30 N-Channel MOSFET from On Semiconductor with 300V drain-source voltage and 59A continuous drain current. Features 56mΩ on-resistance and TO-3PN through-hole package.
Mfr Part #:

FDA59N30

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET from On Semiconductor with 300V drain-source voltage and 59A continuous drain current. Features 56mΩ on-resistance and TO-3PN through-hole package.
✓ Total Stock: 25,733 pcs

FDA59N30 Available from 5 distributors

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FDA59N30 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDA59N30 Description

Short technical summary and product information.

The FDA59N30 is an N-Channel MOSFET manufactured by On Semiconductor. It features a maximum drain-source voltage of 300V and a continuous drain current of 59A at case temperature. The device has a maximum on-resistance of 56mΩ at 29.5A and 10V gate drive. It is designed for high-power switching applications.

 

The MOSFET has a gate threshold voltage of 5V at 250µA and a maximum gate-source voltage of ±30V. Input capacitance is 4670pF at 25V, and total gate charge is 100nC at 10V. Maximum power dissipation is 500W at case temperature. The operating junction temperature range is -55°C to 150°C.

 

The device is offered in a TO-3P-3 or SC-65-3 package, with supplier device package TO-3PN. Mounting type is through hole. The part is RoHS3 compliant (unverified) and has MSL 1 unlimited. It is suitable for power conversion, motor control, and other high-voltage switching applications.

FDA59N30 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: MOSFET N-CH 300V 59A TO3PN
Subcategory: Single MOSFET

FDA59N30 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDA59N30 Features

  • N-Channel MOSFET with 300V drain-source voltage.
  • Continuous drain current rated at 59A.
  • Low on-resistance of 56 milliohms.
  • Through-hole TO-3PN package.
  • Maximum power dissipation of 500W.

FDA59N30 Applications

  • Used in high-voltage power supplies.
  • Suitable for motor control circuits.
  • Ideal for DC-DC converters.
  • Applied in inverter systems.
  • Used in industrial power switching.

FDA59N30 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDA59N30?

300V.

What package does the FDA59N30 come in?

TO-3P-3, SC-65-3 (supplier device package TO-3PN).

What is the operating junction temperature range?

-55°C to 150°C.

Is the FDA59N30 RoHS compliant?

RoHS3 Compliant (unverified).

What is the continuous drain current rating?

59A at case temperature.

What is the on-resistance of the FDA59N30?

56mΩ maximum at 29.5A and 10V gate drive.

What is the gate threshold voltage?

5V at 250µA drain current.

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