| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,288 pcs
|
2288 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
21 pcs
|
21 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDA50N50 is an N-Channel enhancement-mode power MOSFET manufactured by ON Semiconductor using MOSFET (Metal Oxide) technology. This device is designed for high-voltage, high-current switching applications.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 500V and a continuous drain current rating of 48A at case temperature (Tc). The maximum on-resistance (Rds(on)) is 105 milliohms at a gate drive voltage of 10V and a drain current of 24A. The device features a maximum gate charge of 137 nC at Vgs=10V and a maximum input capacitance of 6460 pF at Vds=25V.
The FDA50N50 is housed in a through-hole TO-3P-3 or SC-65-3 package, with a supplier device package designation of TO-3PN. It can dissipate up to 625W and operates over a junction temperature range of -55°C to 150°C.
The maximum drain-source voltage (Vdss) is 500V.
The continuous drain current is 48A at case temperature (Tc).
The maximum on-resistance is 105 milliohms at a drain current of 24A and gate-source voltage of 10V.
The FDA50N50 is available in a through-hole TO-3P-3 or SC-65-3 package, with a supplier device package of TO-3PN.
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 compliant, though this is unverified.
The maximum power dissipation is 625W at case temperature (Tc).