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FDA38N30 FDA38N30 is a 300V, 38A N-Channel MOSFET from onsemi's UniFET family. It features low on-resistance of 85mOhm and fast switching performance.
Mfr Part #:

FDA38N30

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDA38N30 is a 300V, 38A N-Channel MOSFET from onsemi's UniFET family. It features low on-resistance of 85mOhm and fast switching performance.
✓ Total Stock: 5,848 pcs

FDA38N30 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
5,027 pcs
On Request
5027 pcs On Request 1 On Request On Request On Request On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
796 pcs
On Request
796 pcs On Request 1 On Request On Request On Request On Request On Request
Fe Components ✓
Non-Authorised Inventory information
25 pcs
On Request
25 pcs On Request 1 On Request On Request On Request On Request On Request
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FDA38N30 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDA38N30 Description

Short technical summary and product information.

The FDA38N30 is a high-voltage N-Channel MOSFET from onsemi's UniFET family, built using planar stripe and DMOS technology. It is designed to deliver low on-state resistance and improved switching performance, making it suitable for power conversion applications.

 

Key specifications include a drain-source voltage of 300V, continuous drain current of 38A at 25°C, and a maximum on-resistance of 85mOhm (typical 70mOhm at 10V Vgs). The device features low gate charge (60nC typical) and low reverse transfer capacitance (60pF), enabling efficient high-frequency switching. It is 100% avalanche tested with a single-pulse avalanche energy rating of 1200mJ.

 

The FDA38N30 is housed in a TO-3P-3 (SC-65-3) package with through-hole mounting, and the supplier device package is TO-3PN. Typical applications include power factor correction (PFC), flat panel display TV power supplies, ATX power supplies, electronic lamp ballasts, and uninterruptible power supplies. The device is RoHS compliant per the datasheet.

FDA38N30 Quick Information

Product Type: MOSFET
Canonical Name: MOSFET N-Channel 300V 38A TO-3PN
Subcategory: N-Channel MOSFET

FDA38N30 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDA38N30 Features

  • Rated for 300V drain-source voltage.
  • Continuous drain current up to 38A.
  • Low typical on-resistance of 70mOhm.
  • High avalanche energy of 1200mJ.
  • RoHS compliant per datasheet.

FDA38N30 Applications

  • Used in power factor correction circuits.
  • Suitable for flat panel display TV power.
  • Ideal for ATX power supply designs.
  • Used in electronic lamp ballasts.
  • Applicable to uninterruptible power supplies.

FDA38N30 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage rating of the FDA38N30?

300V.

What is the package type of the FDA38N30?

TO-3P-3 (SC-65-3) and supplier device package TO-3PN.

What is the operating temperature range of the FDA38N30?

-55°C to 150°C (junction temperature).

Is the FDA38N30 RoHS compliant?

Yes, RoHS compliant per datasheet.

What is the continuous drain current rating at 25°C?

38A at case temperature 25°C.

What is the typical gate charge of the FDA38N30?

60nC at 10V Vgs.

What is the avalanche energy rating of the FDA38N30?

1200mJ single pulse avalanche energy.

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