| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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52,460 pcs
|
52460 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FDA33N25 is an N-Channel MOSFET from ON Semiconductor. It features a drain-source breakdown voltage of 250V and a continuous drain current of 33A at case temperature. The on-resistance is 94 mOhm maximum at 16.5A drain current and 10V gate drive. The gate charge is 46.8 nC at 10V, and the input capacitance is 2200 pF at 25V drain-source voltage. The gate threshold voltage is 5V at 250µA drain current. The maximum gate-source voltage is ±30V. Power dissipation is 245W at case temperature. The device is designed for through-hole mounting in a TO-3P-3 or SC-65-3 package, with a supplier device package of TO-3PN. The operating junction temperature range is -55°C to 150°C. This MOSFET is suitable for high-power switching applications such as power supplies, motor controls, and inverters.
250V maximum.
Through-hole TO-3P-3, SC-65-3 package; supplier device package TO-3PN.
-55°C to 150°C (junction temperature).
RoHS3 compliant (unverified).
46.8 nC at 10V.
2200 pF at 25V.