FDA28N50 The FDA28N50 is an N-Channel MOSFET from On Semiconductor with a drain-source voltage rating of 500V and continuous drain current of 28A. It is housed in a TO-3P-3L through-hole package.
Mfr Part #:

FDA28N50

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDA28N50 is an N-Channel MOSFET from On Semiconductor with a drain-source voltage rating of 500V and continuous drain current of 28A. It is housed in a TO-3P-3L through-hole package.
✓ Total Stock: 3,150 pcs

FDA28N50 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

FDA28N50 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDA28N50 Description

Short technical summary and product information.

The FDA28N50 is an N-Channel MOSFET from On Semiconductor, part of the UniFET family. It features a drain-source voltage rating of 500V and a continuous drain current of 28A at 25°C case temperature, with a typical on-resistance of 122 mOhm at Vgs=10V. The device offers low gate charge (80 nC typical) and low reverse transfer capacitance (42 pF), making it suitable for high-efficiency switching applications.

 

It is designed for power converter applications including power factor correction (PFC), AC-DC power supplies, and electronic lamp ballasts. The FDA28N50 is 100% avalanche tested, with single pulsed avalanche energy of 2391 mJ, ensuring robustness in demanding environments.

 

The device is packaged in a TO-3P-3L (TO-3PN) through-hole package, with a maximum power dissipation of 310W at 25°C. It operates over a junction temperature range of -55°C to 175°C. The FDA28N50 is RoHS3 compliant, Pb-Free, and Halide Free.

FDA28N50 Quick Information

Product Type: N-Channel MOSFET
Series: UniFET/C0116
Canonical Name: FDA28N50 N-Channel MOSFET
Subcategory: Single MOSFET

FDA28N50 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FDA28N50 Features

  • 500V drain-source voltage rating.
  • 28A continuous drain current capability.
  • Low on-resistance of 122 mOhm typical.
  • Low gate charge of 80 nC typical.
  • RoHS3 compliant and Pb-Free.

FDA28N50 Applications

  • Ideal for power factor correction circuits.
  • Suitable for AC-DC power supplies.
  • Used in flat panel display TV power.
  • Applicable for electronic lamp ballasts.

FDA28N50 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of FDA28N50?

The FDA28N50 has a drain-source voltage rating of 500 V.

What package does the FDA28N50 come in?

The FDA28N50 is available in a TO-3P-3L package with through-hole mounting (TO-3PN).

What is the operating temperature range of FDA28N50?

The operating temperature range is -55°C to 175°C.

Is the FDA28N50 RoHS compliant?

Yes, the FDA28N50 is RoHS3 compliant, Pb-Free, and Halide Free.

What is the typical on-resistance of FDA28N50?

The typical on-resistance is 122 mOhm at Vgs=10V and Id=14A, with a maximum of 155 mOhm.

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