| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,400 pcs
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6400 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request | |
|
4,811 pcs
|
4811 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FDA24N50F is an N-Channel power MOSFET from onsemi's UniFET/FRFET family, designed for high-voltage switching applications. It features a maximum drain-source voltage of 500V and a continuous drain current of 24A at 25°C case temperature. The device offers a typical on-resistance of 166mΩ and a maximum of 200mΩ at 10V gate drive.
This MOSFET is avalanche-rated with a single pulsed avalanche energy capability of 1872mJ and a repetitive avalanche energy rating of 27mJ. It provides low gate charge (typical 65nC) and low reverse transfer capacitance (typical 32pF), contributing to efficient switching performance. The body diode features enhanced reverse recovery with trr less than 100ns and improved dv/dt immunity.
The device is supplied in a TO-3P-3 (TO-3PN) through-hole package, suitable for power converter designs such as PFC, AC-DC power supplies, and UPS systems. Operating temperature range is -55°C to 150°C junction temperature.
500 V
24 A at Tc=25°C
200 mΩ at Vgs=10V, Id=12A
TO-3P-3 (TO-3PN) through-hole package
-55°C to 150°C (junction temperature)
Yes, RoHS3 compliant per datasheet