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FDA20N50F FDA20N50F is an N-Channel power MOSFET from On Semiconductor with a maximum drain-source voltage of 500V and continuous drain current of 22A.
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FDA20N50F

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDA20N50F is an N-Channel power MOSFET from On Semiconductor with a maximum drain-source voltage of 500V and continuous drain current of 22A.
✓ Total Stock: 864 pcs

FDA20N50F Available from 1 distributor

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FDA20N50F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDA20N50F Description

Short technical summary and product information.

The FDA20N50F is an N-Channel power MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications with a maximum drain-to-source voltage (Vdss) of 500V and a continuous drain current rating of 22A at the case temperature (Tc). The device features a maximum drain-to-source on-resistance (Rds(on)) of 260 mOhm at a gate-source voltage of 10V and a drain current of 11A.

 

This MOSFET uses standard gate drive voltages with a maximum gate threshold voltage of 5V at 250µA drain current. The gate charge is specified at a maximum of 65 nC at Vgs=10V, and the input capacitance is a maximum of 3390 pF at Vds=25V. The device can dissipate up to 388W of power at the case temperature.

 

The FDA20N50F is housed in a through-hole TO-3P-3 / SC-65-3 package, also known as the TO-3PN supplier device package. It is designed for an operating junction temperature range of -55°C to 150°C. The part is RoHS3 compliant and REACH unaffected.

FDA20N50F Quick Information

Product Type: Power MOSFET
Canonical Name: FDA20N50F N-Channel Power MOSFET
Subcategory: Single MOSFET

FDA20N50F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDA20N50F Features

  • N-Channel power MOSFET with 500V drain-source voltage.
  • Continuous drain current rating of 22A at case temperature.
  • Low on-resistance of 260 mOhm maximum at 10V gate drive.
  • Through-hole TO-3PN package for robust mounting.
  • Wide operating junction temperature range of -55°C to 150°C.

FDA20N50F Applications

  • Used in high-voltage power supply switching circuits.
  • Suitable for motor control and inverter applications.
  • Ideal for DC-DC converters and power management systems.

FDA20N50F FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDA20N50F?

The maximum drain-source voltage (Vdss) is 500V.

What is the maximum continuous drain current of the FDA20N50F?

The maximum continuous drain current is 22A at the case temperature (Tc).

What is the on-resistance of the FDA20N50F?

The maximum drain-to-source on-resistance (Rds(on)) is 260 mOhm at Vgs=10V and Id=11A.

What is the operating temperature range of the FDA20N50F?

The operating junction temperature range is -55°C to 150°C.

What package is the FDA20N50F available in?

The FDA20N50F is available in a through-hole TO-3P-3 / SC-65-3 package (TO-3PN).

Is the FDA20N50F RoHS compliant?

The FDA20N50F is listed as RoHS3 Compliant and REACH Unaffected, though this data is unverified.

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