| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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426 pcs
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426 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDA20N50-F109 is an N-Channel power MOSFET from onsemi designed for high-voltage switching applications. It is rated for a drain-to-source voltage of 500V and a continuous drain current of 22A at case temperature. The device features a maximum on-resistance of 230mOhm when driven with a 10V gate signal.
This MOSFET offers a maximum gate charge of 59.5 nC and an input capacitance of 3120 pF, making it suitable for moderate-speed switching circuits. The maximum power dissipation is 280W at case temperature, and it can operate over a junction temperature range of -55°C to 150°C.
The part is housed in a through-hole TO-3PN package (also known as TO-3P-3 or SC-65-3), which provides robust thermal performance for high-power designs. The gate-source voltage rating is ±30V, and the maximum gate threshold voltage is 5V at 250µA drain current.
The drain-to-source voltage (Vdss) is 500V.
The maximum continuous drain current is 22A at case temperature (Tc).
The maximum on-resistance (Rds on) is 230mOhm at a drain current of 11A and gate-source voltage of 10V.
It uses a through-hole TO-3PN package (also known as TO-3P-3 or SC-65-3).
The operating junction temperature range is from -55°C to 150°C.
The part is listed as RoHS3 Compliant, though this is unverified from the datasheet.