| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The FDA20N50 is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It features a drain-source voltage rating of 500V and a continuous drain current of 22A at case temperature. The device has a maximum on-resistance of 230mOhm at 11A gate drive of 10V, making it suitable for high-voltage switching applications.
This MOSFET uses standard planar technology and offers a gate threshold voltage of up to 5V. It has an input capacitance of 3120pF and a maximum gate charge of 59.5nC at 10V, which are important parameters for gate drive design.
The FDA20N50 is housed in a TO-3PN package (also compatible with TO-3P-3 and SC-65-3 outlines) and is designed for through-hole mounting. This package provides good thermal performance for power dissipation in industrial and power supply circuits.
The FDA20N50 has a maximum drain-source voltage of 500V.
The maximum continuous drain current is 22A at case temperature.
The maximum on-resistance is 230mOhm at 11A drain current and 10V gate-source voltage.
It comes in a TO-3PN through-hole package, also compatible with TO-3P-3 and SC-65-3.
The maximum gate threshold voltage is 5V at 250µA drain current.
The maximum input capacitance is 3120pF at 25V drain-source voltage.
The maximum gate charge is 59.5nC at 10V gate-source voltage.