| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,507 pcs
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2507 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FDA16N50LDTU is an N-Channel enhancement-mode MOSFET designed for high-voltage switching applications. It features a drain-source voltage of 500V and a continuous drain current of 16.5A at case temperature. The device offers a maximum on-resistance of 380mOhm at 8.3A and 10V gate drive, ensuring efficient power conversion.
This MOSFET utilizes planar stripe DMOS technology and is housed in a TO-3PN (L-Forming) through-hole package. It supports a gate-source voltage range of ±30V and has a maximum gate charge of 45nC at 10V, enabling fast switching. The input capacitance is 1945pF at 25V drain-source.
The device is rated for a maximum power dissipation of 205W at case temperature and operates over a junction temperature range of -55°C to 150°C. It is suitable for switch-mode power supplies, power factor correction circuits, and other high-voltage power conversion topologies.
The drain-source voltage rating is 500V.
The maximum drain current is 16.5A at case temperature.
The maximum on-resistance is 380mOhm at 8.3A drain current and 10V gate-source voltage.
It comes in a TO-3P-3 / SC-65-3 (Formed Leads) through-hole package, also known as TO-3PN (L-Forming).
The operating junction temperature range is -55°C to 150°C.
The part is marked as RoHS3 compliant, but this information is unverified.