| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,370 pcs
|
11370 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
158 pcs
|
158 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDA16N50-F109 is an N-Channel power MOSFET from ON Semiconductor, built using MOSFET (Metal Oxide) technology. It is designed for high-voltage switching applications.
The device features a drain-to-source voltage (Vdss) of 500 V and a continuous drain current of 16.5 A at a case temperature of 25°C. The maximum on-resistance is 380 mΩ at a gate drive of 10 V and a drain current of 8.3 A. Gate threshold voltage is 5 V maximum at 250 µA drain current. The total gate charge is 45 nC at 10 V gate voltage, and the input capacitance is 1945 pF at 25 V drain-source voltage. Maximum power dissipation is 205 W at case temperature.
This MOSFET is offered in a through-hole TO-3P-3 / SC-65-3 package, with the supplier device package being TO-3PN. The operating junction temperature range is -55°C to +150°C. The device is rated for a maximum gate-source voltage of ±30 V.
Typical applications include power supplies, converters, and motor control circuits that require high-voltage N-Channel switching capabilities.
The drain-to-source voltage is 500 V.
The maximum continuous drain current is 16.5 A at 25°C case temperature.
The MOSFET comes in a TO-3P-3 / SC-65-3 through-hole package, with the supplier device package designated as TO-3PN.
The junction operating temperature range is -55°C to +150°C.
The component is listed as RoHS3 Compliant, though this status is unverified and should be confirmed with the manufacturer.
The maximum on-resistance is 380 mOhm at a gate voltage of 10 V and drain current of 8.3 A.
The maximum gate threshold voltage is 5 V at a drain current of 250 µA.