FDA032N08 N-Channel MOSFET from On Semiconductor with 75V drain-source voltage and 120A continuous drain current. Housed in a TO-3PN through-hole package.
Mfr Part #:

FDA032N08

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET from On Semiconductor with 75V drain-source voltage and 120A continuous drain current. Housed in a TO-3PN through-hole package.
✓ Total Stock: 5,378 pcs

FDA032N08 Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,010 pcs
2010 pcs On Request 1 On Request On Request 24+ On Request On Request
Non-Authorised Inventory information
2,005 pcs
2005 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
900 pcs
900 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
463 pcs
463 pcs On Request 1 On Request On Request 1415+ On Request On Request

FDA032N08 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDA032N08 Description

Short technical summary and product information.

The FDA032N08 is an N-Channel power MOSFET manufactured by On Semiconductor using advanced POWERTRENCH technology. It features a drain-source voltage rating of 75V and a continuous drain current of 120A (package limited at 25°C), with a maximum power dissipation of 375W. The device offers low on-resistance of 2.5 mΩ typical at VGS=10V, enabling efficient power conversion.

 

This MOSFET is designed for applications such as synchronous rectification in ATX/server/telecom power supplies, battery protection circuits, and motor drives. It provides fast switching speed and low gate charge (220 nC max) for improved efficiency.

 

The device is housed in a TO-3P-3 (SC-65-3) through-hole package with a TO-3PN supplier device package. It is RoHS compliant and has an operating temperature range of -55°C to 175°C.

FDA032N08 Quick Information

Product Type: Power MOSFET
Canonical Name: N-Channel MOSFET, 75V, 120A, TO-3PN
Subcategory: N-Channel Power MOSFET

FDA032N08 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDA032N08 Features

  • 75V drain-source voltage rating.
  • 120A continuous drain current (package limited).
  • Low on-resistance of 2.5 mΩ typical.
  • Fast switching speed with low gate charge.
  • RoHS compliant and Pb-free.

FDA032N08 Applications

  • Synchronous rectification in ATX/server/telecom PSU.
  • Battery protection circuit applications.
  • Motor drives and uninterruptible power supplies.

FDA032N08 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDA032N08?

The FDA032N08 has a drain-source voltage rating of 75V.

What package does the FDA032N08 come in?

The FDA032N08 is available in a TO-3P-3 (SC-65-3) through-hole package, with a supplier device package of TO-3PN.

What is the operating temperature range of the FDA032N08?

The operating temperature range is -55°C to 175°C.

Is the FDA032N08 RoHS compliant?

Yes, the FDA032N08 is RoHS3 compliant as per the datasheet.

What is the maximum continuous drain current of the FDA032N08?

The maximum continuous drain current is 120A at Tc=25°C (package limited), 235A (silicon limited at 25°C), and 165A at Tc=100°C.

What is the on-resistance of the FDA032N08?

The typical on-resistance is 2.5 mΩ at VGS=10V, ID=75A, with a maximum of 3.2 mΩ.

What is the gate charge of the FDA032N08?

The maximum gate charge is 220 nC at VGS=10V.

Home
Account

Categories