| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,010 pcs
|
2010 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
2,005 pcs
|
2005 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
900 pcs
|
900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
463 pcs
|
463 pcs | On Request | 1 | On Request | On Request | 1415+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDA032N08 is an N-Channel power MOSFET manufactured by On Semiconductor using advanced POWERTRENCH technology. It features a drain-source voltage rating of 75V and a continuous drain current of 120A (package limited at 25°C), with a maximum power dissipation of 375W. The device offers low on-resistance of 2.5 mΩ typical at VGS=10V, enabling efficient power conversion.
This MOSFET is designed for applications such as synchronous rectification in ATX/server/telecom power supplies, battery protection circuits, and motor drives. It provides fast switching speed and low gate charge (220 nC max) for improved efficiency.
The device is housed in a TO-3P-3 (SC-65-3) through-hole package with a TO-3PN supplier device package. It is RoHS compliant and has an operating temperature range of -55°C to 175°C.
The FDA032N08 has a drain-source voltage rating of 75V.
The FDA032N08 is available in a TO-3P-3 (SC-65-3) through-hole package, with a supplier device package of TO-3PN.
The operating temperature range is -55°C to 175°C.
Yes, the FDA032N08 is RoHS3 compliant as per the datasheet.
The maximum continuous drain current is 120A at Tc=25°C (package limited), 235A (silicon limited at 25°C), and 165A at Tc=100°C.
The typical on-resistance is 2.5 mΩ at VGS=10V, ID=75A, with a maximum of 3.2 mΩ.
The maximum gate charge is 220 nC at VGS=10V.