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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Fermionics Opto-Technology FD80S8-F8 is a high-speed InGaAs photodiode engineered for demanding applications in analog and digital communications systems, LANs, FDDI, instrumentation, and sensing. This device utilizes planar-passivated technology with broadband AR-coated photosensitive surfaces.
Key electrical characteristics include a typical responsivity of 0.9 A/W at 1550 nm and a fast rise/fall time of 150 ps. The photodiode exhibits low dark current, typically 0.1 nA at 5V reverse bias, and low capacitance, with a maximum of 0.75 pF at 5V reverse bias. The photosensitive area is 80 µm in diameter.
The FD80S8-F8 is mounted on a type S8 ceramic package with a pigtail assembly, suitable for horizontal mounting. Custom fiber and connector terminations are available, making it adaptable for various system integrations. The device operates within a temperature range of -40°C to +85°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The responsivity of the FD80S8-F8 photodiode is typically 0.85 A/W at 1300 nm and 0.9 A/W at 1550 nm.
The rise and fall time for the FD80S8-F8 photodiode is a minimum of 150 ps and a maximum of 500 ps.
The capacitance of the FD80S8-F8 photodiode is a minimum of 0.4 pF and a maximum of 0.75 pF at 5V reverse bias.
The operating temperature range for the FD80S8-F8 photodiode is -40°C to +85°C.
The RoHS status of the FD80S8-F8 photodiode is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the FD80S8-F8 photodiode is 1 Unlimited.