| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
238 pcs
|
238 pcs | On Request | 1 | On Request | On Request | 906 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate to Source Voltage (Vgs) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Single Pulse Avalanche Energy (EAS) | |
| Supplier Device Package | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Vgs(th) (Max) @ Id |
The FD6M045N06 is a dual N-channel MOSFET module from On Semiconductor, part of the Power-SPM family designed for high-efficiency synchronous rectification. It integrates two low Rds(on) MOSFETs capable of 60A continuous drain current each at 60V drain-source voltage. Key electrical characteristics include a maximum Rds(on) of 4.5mOhm (typical 3.6mOhm) at 40A and 10V, gate charge of 87nC max (66nC typical), input capacitance of 3890pF, and single pulse avalanche energy rating of 794mJ. The module operates over -40°C to 150°C junction temperature range. It is housed in a fully isolated EPM15 through-hole package with thermal resistance junction-to-case of 3.9°C/W. This device is suitable for secondary-side rectification in isolated converters, server and telecom power supplies, DC/DC converters, and ORing MOSFET applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.25 | $7.25 |
| 10+ | $6.82 | $6.82 |
| 100+ | $6.45 | $6.45 |
| 1,000+ | $6.09 | $6.09 |
| 10,000+ | $5.73 | $5.73 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain to source voltage (Vdss) is 60V minimum, and the maximum gate to source voltage is ±20V.
It is available in an EPM15 through-hole package.
The operating temperature range is -40°C to 150°C (junction temperature).
Yes, it is RoHS3 compliant as per the datasheet.
The maximum continuous drain current is 60A per MOSFET switch at VGS = 10V.
The typical Rds(on) is 3.6mOhm at 40A and 10V, with a maximum of 4.5mOhm.
Yes, it has a single pulse avalanche energy rating of 794mJ.