| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
238 pcs
|
238 pcs | On Request | 1 | On Request | On Request | 906 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction to Case Thermal Resistance | |
| Mounting Type | |
| Number of Pins | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Single Pulse Avalanche Energy | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FD6M033N06 is a Power-SPM synchronous rectifier module from On Semiconductor, integrating two N-channel MOSFETs in a compact EPM15 through-hole package. It is designed for high-efficiency synchronous rectification in applications such as internet server and telecom power supplies. Key electrical characteristics include a drain-source breakdown voltage of 60V, continuous drain current of 73A (VGS = 10V), and a typical RDS(on) of 2.6mΩ at VGS = 10V, ID = 40A. The gate charge is 99nC typical at VGS = 10V, and the input capacitance is 6010pF maximum at VDS = 25V. The module operates over a junction temperature range of -40°C to 150°C and has a maximum junction-to-case thermal resistance of 3.9°C/W. The package is fully isolated, and the device is RoHS compliant. It is suitable for high-current isolated converters, distributed power architectures, DC/DC converters, and ORing MOSFET applications.
The maximum drain-source breakdown voltage is 60V.
The maximum continuous drain current is 73A at VGS = 10V.
The typical RDS(on) is 2.6mΩ at VGS = 10V, ID = 40A; maximum is 3.3mΩ.
The operating junction temperature range is -40°C to 150°C.
Yes, the device is RoHS3 compliant as per the datasheet.
It is available in a through-hole EPM15 package with 15 pins.
The typical gate charge is 99nC at VGS = 10V; maximum is 129nC.