| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Charge (Typical @ Vgs = 5 V) | |
| Gate to Source Voltage (Vgs) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction to Case Thermal Resistance | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Rds On (Typical/Maximum @ Id = 40 A, Vgs = 10 V) | |
| Single Pulse Avalanche Energy (EAS) | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FD6M016N03 is a dual N-channel MOSFET module from On Semiconductor, originally developed by Fairchild Semiconductor as part of the Power-SPM family. It is designed for synchronous rectification in high-current isolated converters, DC/DC converters, and ORing MOSFET applications.
The module features a maximum drain-source voltage of 30V and a continuous drain current rating of 80A per MOSFET switch. The typical on-resistance is 1.3mOhm at 10V Vgs and 40A, with a maximum of 1.6mOhm. Gate charge is 295nC maximum at 10V Vgs, and input capacitance is 11535pF at 15V Vds. The device has a maximum junction temperature of 150°C and a junction-to-case thermal resistance of 3.9°C/W.
The FD6M016N03 is housed in a through-hole EPM15 package, which is fully isolated. It is RoHS compliant, making it suitable for environmentally conscious designs. The module integrates two MOSFETs with low Miller charge and low body diode reverse recovery charge, improving efficiency in secondary-side rectification.
30V.
EPM15 through-hole package.
-40°C to 150°C (junction temperature).
Yes, RoHS3 compliant.
295nC max at 10V Vgs, 132nC typical at 5V.
1.6mOhm max at 40A, 10V Vgs; typical 1.3mOhm.
80A per MOSFET switch.