| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 951 | On Request | On Request |
| Category | |
| Manufacturer Name |
The Infineon FD1400R12IP4D is a high-power IGBT silicon module designed for demanding applications. It features a maximum collector-emitter voltage of 1200V and a continuous collector current rating of 1400A at 25 C.
This module operates reliably within a wide temperature range, from -40 C to +150 C, with a maximum power dissipation of 7.7 kW. The gate-emitter leakage current is specified at 400 nA.
Packaged in a Tray, the FD1400R12IP4D is suitable for various industrial power applications. Its robust design and specifications make it a component for power conversion and control systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO Max) for the FD1400R12IP4D is 1.2 kV.
The continuous collector current at 25 C is 1.4 kA.
The operating temperature range is from -40 C to +150 C.
The power dissipation (Pd) is 7.7 kW.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.