| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | 0949+ | On Request | On Request |
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The FCX688BTA is an NPN power switching transistor from Diodes Incorporated, designed for low voltage switching and linear applications. It offers a minimum collector-emitter breakdown voltage of 12V and a continuous collector current rating of 3A, with a peak pulse capability of 10A. The device provides a high DC current gain (hFE) of 500 minimum at 100mA collector current and 2V VCE, and features low saturation voltage down to 40mV at 100mA, enabling efficient power management.
This transistor is housed in a surface mount SOT89-3 package (TO-243AA) with a green molding compound and matte tin plated leads. It is fully RoHS3 compliant, lead-free, and halogen- and antimony-free. The operating junction temperature range spans -55°C to 150°C, and the device is rated for a maximum power dissipation of 2W. With a transition frequency of 150MHz, it is suitable for moderate speed switching applications.
The FCX688BTA is the NPN complementary type to the PNP FCX789A, allowing for push-pull configurations. Typical applications include load switches, battery management, and general purpose power switching in portable electronics.
The FCX688BTA is packaged in a TO-243AA (SOT-89-3) surface mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant, fully lead-free, and halogen-free.
The minimum collector-emitter breakdown voltage is 12V at 10mA.
The maximum continuous collector current is 3A, with a peak pulse current of 10A.
The minimum DC current gain is 500 at 100mA collector current and 2V VCE.
The maximum VCE saturation is 40mV at 100mA/1mA, 60mV at 100mA/0.5mA, 180mV at 1A/10mA, and 400mV at 4A/50mA.