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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,405 pcs
|
8405 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Base Current | |
| Base-Emitter Turn-On Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Peak Pulse Current | |
| Power | |
| Ptot (Nominal @ Tamb=25 °C, mounted on FR 4 15 x 15 x 0.6 mm) | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Turn Off Time | |
| Turn On Time | |
| VCE(sat) (Minimum/Typical/Maximum @ Ib=10 mA, Ic=0.1 A) | |
| VCE(sat) (Minimum/Typical/Maximum @ Ib=10 mA, Ic=1 A) | |
| VCE(sat) (Minimum/Typical/Maximum @ Ib=50 mA, Ic=3 A) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (Minimum @ IC=3 A, VCE=2 V) | |
| hFE (Minimum @ Ic=10 mA, Vce=2 V) | |
| hFE (Minimum @ Ic=12 A, Vce=2 V) | |
| hFE (Minimum @ Ic=5 A, Vce=2 V) |
The FCX617TA is an NPN silicon power switching transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage of 15V and a continuous collector current rating of 3A, with a peak pulse current capability of 12A.
The device offers excellent DC current gain characteristics, with a minimum hFE of 300 at 200mA and 2V, and maintains high gain up to 12A. Extremely low collector-emitter saturation voltage, typically 8mV at 0.1A, enables efficient switching with minimal power loss.
The transistor is designed for surface-mount assembly in a TO-243AA (SOT89-3) package. It can dissipate up to 2W when mounted on a 40x40x0.6mm FR4 substrate, with a recommended power dissipation of 1W on a smaller 15x15x0.6mm board. Operating junction temperature range is -55°C to 150°C.
Typical applications include power management, load switching, and driver circuits where high current gain and low saturation voltage are required. The device is RoHS3 compliant and has an MSL rating of 1 (unlimited).
The collector-emitter breakdown voltage (VCEO) is 15V minimum, collector-base breakdown voltage (VCBO) is 15V minimum, and emitter-base breakdown voltage (VEBO) is 5V minimum.
The FCX617TA is available in a TO-243AA package, also known as SOT-89-3, for surface mount assembly.
The operating junction temperature range is -55°C to 150°C.
The FCX617TA is listed as RoHS3 compliant, but this information is unverified and should be confirmed with the manufacturer.
The continuous collector current is 3A, with a peak pulse current of 12A (pulse width 300µs, duty cycle ≤ 2%).
The minimum hFE is 300 at 200mA and 2V, and 200 at 3A and 2V.
The collector-emitter saturation voltage is typically 8mV at 0.1A and 100mV at 3A, with maximum values of 70mV and 400mV respectively.