FCX591ATA

The FCX591ATA is a 40V PNP medium power bipolar junction transistor manufactured by Diodes Incorporated. It is designed for applications requiring high current gain and low saturation voltage, such as power MOSFET and IGBT gate driving, and low loss power switching.

Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of -40V, a continuous collector current (IC) of -1A, and a peak collector current (ICM) of -2A. The DC current gain (hFE) is a minimum of 300 at 100mA collector current and 5V collector-emitter voltage. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 500mV at 1A collector current and 100mA base current. The transition frequency (fT) is 150MHz, making it suitable for moderate speed switching. The device is rated for ESD protection up to 4000V HBM and 400V MM.

Thermal characteristics include a maximum power dissipation of 1W when mounted on a standard 15mm x 15mm FR4 PCB with high coverage of 1oz copper. The junction-to-ambient thermal resistance is 125°C/W, and junction-to-lead thermal resistance is 10.01°C/W. The device operates over a junction temperature range of -65°C to 150°C.

Packaged in the compact SOT89-3 surface mount package (TO-243AA), the FCX591ATA weighs approximately 0.05 grams and is supplied in tape and reel packaging with 1000 units per reel. The terminals are matte tin plated for solderability. The part is fully RoHS3 compliant, lead-free, and halogen-free, with a moisture sensitivity level of 1 (unlimited floor life). A complementary NPN type, the FCX491A, is available, as well as an automotive-compliant variant, the FCX591AQ.