FCX1151ATA FCX1151ATA is a -40V PNP power transistor in SOT89 package. It offers 3A continuous collector current, low VCE(sat) of -220mV at 1A, and 145MHz transition frequency.
Mfr Part #:

FCX1151ATA

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
FCX1151ATA is a -40V PNP power transistor in SOT89 package. It offers 3A continuous collector current, low VCE(sat) of -220mV at 1A, and 145MHz transition frequency.
Total Stock: 6,025 pcs

FCX1151ATA Available from 2 distributors

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Non-Authorised Inventory information
4,020 pcs
4020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,005 pcs
2005 pcs On Request 1 On Request On Request 21+ On Request On Request

FCX1151ATA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Case Material
Collector-Base Voltage (VCBO)
Collector-Emitter Saturation Resistance
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Rating (Human Body Model)
ESD Rating - Machine Model
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Peak Pulse Collector Current
Power
Storage Temperature Range
Supplier Device Package
Terminal Finish
Thermal Resistance Junction-to-Ambient
Thermal Resistance, Junction to Lead
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Vce Saturation (Typical @ Ic=-1 A)
Voltage
Weight

FCX1151ATA Description

Short technical summary and product information.

The FCX1151ATA is a -40V PNP power transistor from Diodes Incorporated, housed in a compact SOT89 surface-mount package. It is designed for medium-power switching and linear applications.

 

Key electrical specifications include a maximum collector-emitter voltage of -40V, continuous collector current of -3A, and peak pulse current of -5A. The device features a very low collector-emitter saturation voltage of -220mV typical at 1A and a saturation resistance of 66mΩ at 3A. DC current gain (hFE) is a minimum of 250 at 500mA and 2V.

 

The transistor is qualified to AEC-Q101 standards for high-reliability automotive applications. It is RoHS compliant, halogen and antimony free, and has a moisture sensitivity level of 1 per J-STD-020. The operating junction temperature range is -55°C to +150°C.

FCX1151ATA Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: FCX1151ATA -40V PNP Power Transistor in SOT89
Subcategory: Single Bipolar Junction Transistor

FCX1151ATA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FCX1151ATA Features

  • PNP power transistor with -40V VCEO rating.
  • 3A continuous collector current capability.
  • Low VCE(sat) of -220mV typical at 1A.
  • 145MHz transition frequency for switching applications.
  • AEC-Q101 qualified for automotive reliability.

FCX1151ATA Applications

  • Motor driving including DC fans.
  • Solenoid, relay and actuator drivers.
  • DC-DC converter modules.
  • Backlight inverter circuits.
  • MOSFET gate driver circuits.

FCX1151ATA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the FCX1151ATA?

The maximum collector-emitter voltage (VCEO) is -40V.

What is the continuous collector current rating?

The maximum continuous collector current is -3A.

What package is the FCX1151ATA available in?

The FCX1151ATA is available in a TO-243AA (SOT-89) surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the FCX1151ATA RoHS compliant?

Yes, the FCX1151ATA is RoHS compliant and halogen and antimony free (Green device).

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain (hFE) is 250 at Ic=500mA and Vce=2V.

What is the transition frequency of the FCX1151ATA?

The typical transition frequency is 145 MHz.

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