FCU900N60Z FCU900N60Z is an N-Channel MOSFET from ON Semiconductor with a 600V drain-source voltage rating and 4.5A continuous drain current. It features a typical on-resistance of 820mΩ and is housed in a through-hole IPAK package.
Mfr Part #:

FCU900N60Z

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FCU900N60Z is an N-Channel MOSFET from ON Semiconductor with a 600V drain-source voltage rating and 4.5A continuous drain current. It features a typical on-resistance of 820mΩ and is housed in a through-hole IPAK package.
✓ Total Stock: 1,488 pcs
$ Price Range: $0.38 - $0.56

FCU900N60Z Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,488 pcs
1488 pcs On Request 1 On Request On Request 13+ On Request On Request

FCU900N60Z Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCU900N60Z Description

Short technical summary and product information.

The FCU900N60Z is an N-Channel MOSFET from ON Semiconductor's SuperFET II family, designed for high-voltage switching applications. It utilizes charge balance technology to achieve low on-resistance and reduced gate charge, enabling efficient power conversion.

 

Key electrical specifications include a drain-source voltage (Vdss) of 600V, a maximum continuous drain current of 4.5A at 25°C, and a maximum on-resistance of 900mΩ at 10V gate drive. The device offers a typical gate charge of 13nC and a maximum input capacitance of 710pF, supporting fast switching performance.

 

The FCU900N60Z is housed in a TO-251-3 (IPAK) through-hole package and is suitable for applications such as power factor correction (PFC), server and telecom power supplies, and LCD/LED TV power systems. It is rated for operation over a junction temperature range of -55°C to 150°C.

FCU900N60Z Quick Information

Product Type: MOSFET
Series: FCU900N60Z
Canonical Name: FCU900N60Z N-Channel MOSFET
Subcategory: Single MOSFET

FCU900N60Z Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCU900N60Z Estimated Pricing

Qty Low High
1+ $0.56 $0.56
10+ $0.51 $0.51
100+ $0.47 $0.47
500+ $0.43 $0.43
1,000+ $0.38 $0.38

Estimated market price range - modelled values for guidance only, not live distributor offers.

FCU900N60Z Features

  • 600V drain-source voltage rating.
  • 4.5A continuous drain current.
  • 900mΩ maximum on-resistance.
  • Ultra low gate charge of 13nC.
  • 100% avalanche tested.

FCU900N60Z Applications

  • Suitable for PFC boost converters.
  • Used in server and telecom power supplies.
  • Ideal for LCD/LED TV power systems.
  • Applicable in solar inverter designs.
  • Used in battery charger circuits.

FCU900N60Z FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FCU900N60Z?

The drain-source voltage (Vdss) is 600V.

What is the maximum continuous drain current?

The maximum continuous drain current is 4.5A at a case temperature of 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 900mΩ at a gate-source voltage of 10V and drain current of 2.3A.

What package is the FCU900N60Z available in?

It is available in a TO-251-3 (IPAK) through-hole package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FCU900N60Z RoHS compliant?

The datasheet states it is RoHS compliant, but this is unverified.

What is the gate charge of this MOSFET?

The maximum gate charge is 17nC at a gate-source voltage of 10V.

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