FCU850N80Z FCU850N80Z is an N-Channel power MOSFET from ON Semiconductor with 800V drain-source breakdown voltage, 6A continuous drain current, and 850mOhm typical on-resistance. It is housed in a through-hole I-PAK (TO-251AA) package.
Mfr Part #:

FCU850N80Z

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FCU850N80Z is an N-Channel power MOSFET from ON Semiconductor with 800V drain-source breakdown voltage, 6A continuous drain current, and 850mOhm typical on-resistance. It is housed in a through-hole I-PAK (TO-251AA) package.
✓ Total Stock: 210 pcs

FCU850N80Z Available from 1 distributor

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FCU850N80Z Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCU850N80Z Description

Short technical summary and product information.

The FCU850N80Z is an N-Channel enhancement-mode power MOSFET designed for high-efficiency power conversion applications. With a maximum drain-to-source voltage of 800V and a continuous drain current rating of 6A, this device is suitable for switch-mode power supplies, lighting ballasts, and other high-voltage switching circuits.

 

The MOSFET features a low typical on-resistance of 850mOhm at 10V gate drive and 3A drain current, minimizing conduction losses. Its gate threshold voltage of 4.5V maximum ensures reliable turn-on under a wide range of operating conditions. The device is capable of dissipating up to 75W of power when mounted on a heatsink.

 

Packaged in the industry-standard I-PAK (TO-251AA) through-hole package, the FCU850N80Z is easy to solder onto printed circuit boards. Its operating junction temperature range of -55°C to 150°C allows use in demanding industrial and automotive environments. The gate charge of 29nC at Vgs=10V ensures fast switching performance, while the input capacitance of 1315pF at Vds=100V helps maintain stable operation.

FCU850N80Z Quick Information

Product Type: MOSFET
Canonical Name: FCU850N80Z N-Channel MOSFET
Subcategory: Single MOSFET

FCU850N80Z Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCU850N80Z Features

  • 800V drain-source voltage rating.
  • 6A continuous drain current capability.
  • 850mOhm on-resistance at 10V gate drive.
  • Through-hole I-PAK package.
  • 75W power dissipation at case temperature.

FCU850N80Z Applications

  • High voltage DC-DC converter designs.
  • Switch-mode power supply circuits.
  • LED lighting ballasts and drivers.
  • Power factor correction stages.
  • Household and industrial power supplies.

FCU850N80Z FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FCU850N80Z?

The maximum drain-to-source voltage is 800V.

What is the continuous drain current rating of the FCU850N80Z?

The continuous drain current is 6A at Tc.

What is the on-resistance of the FCU850N80Z?

The maximum on-resistance is 850mOhm at a drain current of 3A and gate-to-source voltage of 10V.

What is the gate threshold voltage of this device?

The maximum gate threshold voltage is 4.5V at a drain current of 600µA.

What package does the FCU850N80Z come in?

It comes in a through-hole I-PAK package (TO-251AA).

What is the operating temperature range of the FCU850N80Z?

The junction operating temperature range is -55°C to 150°C.

What is the maximum power dissipation of the FCU850N80Z?

The maximum power dissipation is 75W at case temperature Tc.

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