| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,882 pcs
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1882 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCU360N65S3R0 is an N-Channel power MOSFET from ON Semiconductor's SUPERFET III series. This super-junction MOSFET features a drain-source voltage rating of 650V, continuous drain current of 10A at 25°C case temperature, and a maximum on-resistance of 360mΩ at 10V gate drive. Typical Rds(on) is 310mΩ. Gate charge is 18nC typicl, and effective output capacitance is 173 pF. The device is 100% avalanche tested with a single pulse avalanche energy of 40 mJ. Packaged in a TO-251-3 (I-PAK) through-hole leaded package, it is suitable for power supplies in computng, telecom/server, industrial, ligting, charger, and adapterapplications. RoHS compliant and Pb-Fre.
650 V.
TO-251-3 (I-PAK) through-hole package.
-55°C to 150°C.
Yes, it is RoHS compliant and Pb-free.
10A at 25°C case temperature.