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FCU3400N80Z N-Channel MOSFET rated for 800V drain-source voltage and 2A continuous drain current, with 3.4 Ohm on-resistance at 10V gate drive.
Mfr Part #:

FCU3400N80Z

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 800V drain-source voltage and 2A continuous drain current, with 3.4 Ohm on-resistance at 10V gate drive.
✓ Total Stock: 4,938 pcs

FCU3400N80Z Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
3,938 pcs
On Request
3938 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
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FCU3400N80Z Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FCU3400N80Z Description

Short technical summary and product information.

The FCU3400N80Z is an N-Channel enhancement-mode MOSFET from On Semiconductor, designed for high-voltage switching applications. It features a maximum drain-to-source voltage of 800V and a continuous drain current of 2A at case temperature. The device offers a typical on-resistance of 3.4 Ohm at a gate drive of 10V and 1A drain current.

 

With a gate threshold voltage of 4.5V at 200µA drain current and a maximum gate charge of 9.6 nC at 10V, this MOSFET is suitable for moderate-speed switching circuits. The input capacitance is 400 pF at 100V drain-source bias, indicating moderate switching losses.

 

The device is housed in a through-hole I-PAK package (TO-251-3 short leads), which provides good thermal performance with a maximum power dissipation of 32W at case temperature. The operating junction temperature range is -55°C to 150°C, making it suitable for industrial environments.

FCU3400N80Z Quick Information

Product Type: MOSFET
Canonical Name: FCU3400N80Z
Subcategory: N-Channel

FCU3400N80Z Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCU3400N80Z Features

  • N-Channel MOSFET with 800V drain-source rating.
  • Continuous drain current of 2A at case temperature.
  • Low on-resistance of 3.4 Ohm at 10V gate drive.
  • Through-hole I-PAK package for easy mounting.
  • Wide operating temperature range -55°C to 150°C.

FCU3400N80Z Applications

  • Used in high-voltage DC-DC converter circuits.
  • Suitable for AC-DC power supply primary side.
  • Ideal for motor control and inverter stages.
  • Applied in industrial power management systems.

FCU3400N80Z FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FCU3400N80Z?

The maximum drain-to-source voltage is 800V.

What is the continuous drain current rating?

The continuous drain current is 2A at case temperature (Tc).

What is the on-resistance of this MOSFET?

The maximum on-resistance is 3.4 Ohm at a gate voltage of 10V and drain current of 1A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package does the FCU3400N80Z come in?

It comes in a through-hole I-PAK package (TO-251-3 short leads).

Is the FCU3400N80Z RoHS compliant?

The part is marked as RoHS3 compliant, though this is unverified.

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