| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,400 pcs
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2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCPF9N60NTYDTU is an N-Channel MOSFET from ON Semiconductor (formerly Fairchild Semiconductor). It features a drain-source breakdown voltage of 600V and a continuous drain current of 9A at case temperature. The device offers a maximum on-resistance of 385 mΩ at 4.5A and 10V gate drive, with a total gate charge of 29 nC at 10V. Input capacitance is 1240 pF at 100V drain-source.
This MOSFET is designed for high-voltage switching applications. It can dissipate up to 29.8W at case temperature and operates over a junction temperature range of -55°C to 150°C. The device is through-hole mounted and comes in a TO-220-3 Full Pack package with formed leads, also known as TO-220F-3 (Y-Forming).
The part is RoHS3 compliant (unverified) and has an MSL rating of 1 (unlimited). It is suitable for power supply, motor control, and lighting applications where high voltage and moderate current switching is required.
600V.
TO-220-3 Full Pack, Formed Leads (TO-220F-3).
-55°C to 150°C (junction).
RoHS3 Compliant (unverified).
385 mΩ maximum at 4.5A, 10V.