| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100,000 pcs
|
100000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,812 pcs
|
2812 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
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The FCPF9N60NT is an N-Channel MOSFET manufactured by ON Semiconductor. It features a maximum drain-to-source voltage of 600V and a continuous drain current of 9A at case temperature. The device has a maximum on-resistance of 385 mOhm at 4.5A and 10V gate drive. Gate charge is 29 nC at 10V, and input capacitance is 1240 pF at 100V drain-source. The MOSFET is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, suitable for easy mounting on heatsinks. Operating temperature range is -55°C to 150°C. Maximum power dissipation is 29.8W at case temperature.
TO-220-3 Full Pack (TO-220F-3) through-hole package.
-55°C to 150°C (junction).
RoHS3 compliant (unverified).
600V.
9A at case temperature.
385 mOhm at 4.5A and 10V gate drive.
29 nC at 10V.