| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
56,000 pcs
|
56000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
11,200 pcs
|
11200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCPF850N80Z is an N-Channel MOSFET from On Semiconductor's SUPERFET II family, designed for high-voltage switching applications. It features a maximum drain-to-source voltage of 800V and a continuous drain current of 8A at 25°C case temperature. The device offers a typical on-resistance of 710mΩ and a maximum of 850mΩ at 10V gate drive.
This MOSFET utilizes charge balance technology to achieve low on-resistance and low gate charge (typical 22nC). It also provides low effective output capacitance (106pF typical) and low output capacitance stored energy (2.3µJ typical at 400V), contributing to efficient switching performance. The device is 100% avalanche tested and includes an internal gate-source ESD diode.
The FCPF850N80Z is housed in a TO-220 Full Pack (TO-220F) through-hole package, suitable for applications such as AC-DC power supplies and LED lighting. It is RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.24 | $2.24 |
| 10+ | $2.01 | $2.01 |
| 100+ | $1.64 | $1.64 |
| 500+ | $1.40 | $1.40 |
| 1,000+ | $1.18 | $1.18 |
| 2,000+ | $1.12 | $1.12 |
| 5,000+ | $1.08 | $1.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 800V.
The continuous drain current is 8A at a case temperature of 25°C, and 5.1A at 100°C.
The typical on-resistance is 710mΩ and the maximum is 850mΩ at a drain current of 3A and gate-source voltage of 10V.
It comes in a TO-220-3 Full Pack (TO-220F) through-hole package.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS compliant.