| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,630 pcs
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2630 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCPF7N60NT is a single N-Channel MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications with a drain-source voltage rating of 600V and a continuous drain current of 6.8A at 25°C case temperature. The device is housed in a TO-220-3 Full Pack package (TO-220F-3) and utilizes through-hole mounting.
Key electrical characteristics include a maximum on-resistance of 520 mOhm at 3.4A drain current and 10V gate-source voltage, with a maximum gate threshold voltage of 4V at 250 µA. The total gate charge is 35.6 nC at 10V, and the input capacitance is 960 pF at 100V drain-source voltage. The recommended gate drive voltage is 10V, and the maximum gate-source voltage is ±30V.
The MOSFET operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 30.5W at 25°C case temperature. It is listed as RoHS3 compliant, with an MSL rating of 1 (unlimited) and REACH unaffected status. The device is suitable for power management circuits where high voltage and moderate current switching are required.
600V.
6.8A at 25°C case temperature.
520 mOhm at 3.4A drain current and 10V gate-source voltage.
-55°C to 150°C (junction temperature).
TO-220-3 Full Pack (supplier device package TO-220F-3).
Listed as RoHS3 compliant (unverified).
35.6 nC at 10V gate-source voltage.