| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,401 pcs
|
2401 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCPF7N60 is an N-Channel MOSFET from On Semiconductor's SUPERFET series. It features a maximum drain-source voltage of 600V and a continuous drain current of 7A at 25°C case temperature. The device utilizes charge balance technology for low on-resistance and low gate charge, with typical RDS(on) of 530 mOhm and typical total gate charge of 23 nC. The maximum power dissipation is 31W at 25°C case temperature, with a maximum junction temperature of 150°C. The MOSFET is available in a TO-220F (TO-220-3 Full Pack) through-hole package and is RoHS compliant and lead-free.
The maximum drain-source voltage (Vdss) is 600 V at room temperature, 650 V at Tj=150°C.
The maximum continuous drain current is 7 A at Tc=25°C and 4.4 A at Tc=100°C.
The maximum on-resistance is 600 mOhm at Id=3.5A, Vgs=10V. Typical on-resistance is 530 mOhm.
The operating junction temperature range is -55°C to 150°C.
The FCPF7N60 is available in a TO-220-3 Full Pack (TO-220F) through-hole package.
Yes, the FCPF7N60 is RoHS3 compliant and lead-free (Pb-Free).
The typical total gate charge at Vgs=10V is 23 nC. The maximum total gate charge is 30 nC.