| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,082 pcs
|
11082 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCPF650N80Z is an N-Channel MOSFET from On Semiconductor's SUPERFET II family, utilizing charge balance technology for low on-resistance and gate charge. It is rated for a maximum drain-source voltage of 800V and a continuous drain current of 10A at 25°C (6.3A at 100°C). The typical drain-source on-resistance is 530mΩ, with a maximum of 650mΩ at 10V gate drive.
This MOSFET features ultra-low gate charge (27nC typical), low output capacitance (Coss(eff.) 124pF), and low output capacitance stored energy (2.8µJ at 400V). It is 100% avalanche tested, with a single pulse avalanche energy rating of 204mJ. The device also includes an internal gate-source ESD diode for over 2kV HBM surge withstand.
Packaged in a TO-220-3 Full Pack (TO-220F) through-hole package, it is suited for high-voltage switching applications such as AC-DC power supplies, LED lighting, and industrial power systems. The part is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 150+ | $1.99 | $1.99 |
| 250+ | $1.66 | $1.66 |
| 500+ | $1.61 | $1.61 |
| 1,000+ | $1.55 | $1.55 |
| 2,000+ | $1.53 | $1.53 |
| 4,000+ | $1.51 | $1.51 |
| 8,000+ | $1.50 | $1.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V maximum.
TO-220-3 Full Pack (TO-220F).
-55°C to 150°C junction temperature.
Yes, RoHS3 compliant.
10A at Tc=25°C; 6.3A at Tc=100°C.
530mΩ typical, 650mΩ maximum at Vgs=10V.
30.5W at Tc=25°C.