FCPF600N65S3R0L N-Channel power MOSFET from On Semiconductor's SUPERFET III family, rated for 650V drain-source voltage and 6A continuous drain current. Features low on-resistance of 600mΩ and low gate charge for efficient switching.
Mfr Part #:

FCPF600N65S3R0L

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel power MOSFET from On Semiconductor's SUPERFET III family, rated for 650V drain-source voltage and 6A continuous drain current. Features low on-resistance of 600mΩ and low gate charge for efficient switching.
✓ Total Stock: 487,697 pcs

FCPF600N65S3R0L Available from 1 distributor

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FCPF600N65S3R0L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FCPF600N65S3R0L Description

Short technical summary and product information.

The FCPF600N65S3R0L is an N-Channel power MOSFET from On Semiconductor's SUPERFET III Easy Drive family. It utilizes charge balance technology to achieve a low on-resistance of 600mΩ (max) at Vgs = 10V and a low gate charge of 11 nC (typ). The device is rated for a maximum drain-source voltage of 650V (700V at Tj = 150°C) and a continuous drain current of 6A at Tc = 25°C.

 

This MOSFET is designed for efficient switching performance with low effective output capacitance (typ. 127 pF) and is 100% avalanche tested. It can withstand high dv/dt rates (100 V/ns) and is suitable for applications requiring robust operation.

 

The device is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, offering isolated mounting. It is Pb-Free and RoHS compliant, making it suitable for use in various power supply and industrial applications.

FCPF600N65S3R0L Quick Information

Product Type: Power MOSFET
Series: Easy Drive
Canonical Name: FCPF600N65S3R0L Power MOSFET, N-Channel, SUPERFET III, 650V, 6A, 600mΩ, TO-220F-3
Subcategory: Super-Junction MOSFET

FCPF600N65S3R0L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FCPF600N65S3R0L Features

  • 650V drain-source voltage rating.
  • 6A continuous drain current at 25°C.
  • Low on-resistance of 600mΩ max.
  • Low gate charge of 11 nC typical.
  • 100% avalanche tested for reliability.

FCPF600N65S3R0L Applications

  • Ideal for computing and display power supplies.
  • Used in telecom and server power supplies.
  • Suitable for industrial power supply designs.
  • Applicable in lighting, charger, and adapter circuits.

FCPF600N65S3R0L FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss) of the FCPF600N65S3R0L?

The maximum drain-source voltage is 650V, and 700V at a junction temperature of 150°C.

What is the maximum continuous drain current (Id) of this MOSFET?

The maximum continuous drain current is 6A at a case temperature of 25°C, and 3.8A at 100°C.

What is the typical on-resistance (Rds(on)) of the FCPF600N65S3R0L?

The typical on-resistance is 474 mΩ, with a maximum of 600 mΩ at Id = 3A and Vgs = 10V.

What is the operating temperature range for this device?

The operating junction temperature range is -55°C to +150°C.

What package type does the FCPF600N65S3R0L come in?

It comes in a TO-220-3 Full Pack (TO-220F-3) through-hole package.

Is the FCPF600N65S3R0L RoHS compliant?

Yes, the device is RoHS3 compliant and Pb-Free as per the datasheet.

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