| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
735 pcs
|
735 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCPF600N60Z is an N-Channel MOSFET from On Semiconductor's SUPERFET II family, utilizing charge balance technology for low on-resistance and gate charge. It features a maximum drain-source voltage of 600V (650V at Tj=150°C) and continuous drain current of 7.4A at 25°C. The typical on-resistance is 510mOhm with a maximum of 600mOhm at 10V gate drive. The device offers ultra-low gate charge (typical 20nC) and low effective output capacitance (74pF), enabling efficient switching. It is 100% avalanche tested with a single pulse avalanche energy rating of 135mJ. The MOSFET is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, providing excellent thermal performance with a junction-to-case thermal resistance of 1.4°C/W. The operating temperature range is -55°C to 150°C. Typical applications include LCD/LED TV power supplies, solar inverters, and AC-DC power supplies. The device is RoHS compliant.
600V (650V at Tj=150°C).
TO-220-3 Full Pack (TO-220F-3).
-55°C to 150°C (junction temperature).
Yes, RoHS compliant per datasheet.
20 nC (typical), 26 nC maximum at 10V.
Typical 510 mOhm, maximum 600 mOhm at 3.7A, 10V.
7.4A at Tc=25°C, 4.7A at Tc=100°C.