| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,841 pcs
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8841 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCPF4300N80Z is an N-Channel MOSFET from On Semiconductor's SUPERFET II family, utilizing charge balance technology for low on-resistance and gate charge. It is rated for 800V drain-source voltage and 2.2A continuous drain current at 25°C case temperature, with a maximum on-resistance of 4.3 Ohm at 10V gate drive. The device offers ultra-low gate charge (typical 6.8 nC) and low effective output capacitance (typical 36 pF), enabling efficient switching in power supply applications. It is 100% avalanche tested and RoHS compliant. The MOSFET is housed in a TO-220F-3 full-pack through-hole package, providing isolation and ease of mounting. Typical applications include AC-DC power supplies and LED lighting.
The maximum drain-source voltage (Vdss) is 800V.
The continuous drain current is 2.2A at Tc=25°C.
The maximum on-resistance is 4.3 Ohm at Id=800mA and Vgs=10V. Typical on-resistance is 3.4 Ohm.
It comes in a TO-220-3 Full Pack (TO-220F-3) through-hole package.
Yes, the datasheet states it is RoHS compliant.
The operating temperature range is -55°C to 150°C (junction).
The typical gate charge is 6.8 nC at Vgs=10V.