| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCPF400N80ZL1-F154 is an N-Channel power MOSFET from On Semiconductor. It features a maximum drain-source voltage of 800V and a continuous drain current of 11A (at Tj). The device has a maximum on-resistance of 400mOhm at Vgs=10V and Id=5.5A, making it suitable for high-voltage switching applications.
This MOSFET utilizes MOSFET (Metal Oxide) technology and offers a gate charge of 56 nC at 10V and input capacitance of 2350 pF at 100V. The maximum power dissipation is 35.7W at case temperature. The gate threshold voltage is 4.5V at 1.1mA, and the maximum gate-source voltage is ±20V.
The device is housed in a TO-220-3 Full Pack package (also known as TO-220F-3), which is a through-hole mounting type. The operating junction temperature range is -55°C to 150°C. This package provides isolation between the die and the mounting surface, simplifying heatsinking in many designs.
Typical applications include high-voltage power supplies, inverters, and motor control circuits where efficient switching and high voltage capability are required. The device is listed as RoHS3 compliant, REACH unaffected, and has MSL level 1 (unlimited).
800V.
TO-220-3 Full Pack (TO-220F-3) through-hole package.
-55°C to 150°C (junction temperature).
Yes, it is listed as RoHS3 compliant (unverified).
11A (at Tj).
Maximum 4.5V at 1.1mA.
400mOhm maximum at 5.5A and 10V.