| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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35,000 pcs
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35000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCPF400N80ZL1 is an N-Channel MOSFET manufactured by ON Semiconductor, designed for high-voltage switching applications. It has a drain-source voltage rating of 800V and a continuous drain current of 11A at case temperature (Tc). The device features a maximum on-resistance of 400mOhm at a gate-source voltage of 10V and a drain current of 5.5A, ensuring efficient power handling.
This MOSFET utilizes metal-oxide semiconductor technology and offers a maximum gate charge of 56nC at 10V, which facilitates fast switching. The input capacitance is rated at 2350pF at 100V, and the gate threshold voltage is 4.5V at 1.1mA. The device can dissipate up to 35.7W at case temperature, making it suitable for power management circuits.
The FCPF400N80ZL1 is housed in a TO-220-3 Full Pack package (TO-220F-3) with through-hole mounting, providing robust thermal performance and ease of integration. It operates over a junction temperature range of -55°C to 150°C, ensuring reliability in demanding environments.
Typical applications include switch-mode power supplies, power factor correction, and other high-voltage power conversion circuits. The device is RoHS3 compliant and REACH unaffected, supporting environmentally conscious designs.
The drain-source voltage rating is 800V.
The maximum drain current is 11A at case temperature (Tc).
The maximum on-resistance is 400mOhm at a drain current of 5.5A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 150°C.
The package is TO-220-3 Full Pack (TO-220F-3) with through-hole mounting.
Yes, it is RoHS3 compliant.