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559,995 pcs
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559995 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,020 pcs
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2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,646 pcs
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1646 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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111 pcs
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111 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The FCPF400N80Z is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. It is designed for high-voltage switching applications and features a maximum drain-source voltage of 800V and a continuous drain current of 11A at case temperature. The device achieves a low on-resistance of 400mOhm maximum at 10V gate drive, with a gate charge of 56 nC and input capacitance of 2350 pF.
This MOSFET supports a gate threshold voltage of 4.5V and a maximum gate-source voltage of ±20V. It can dissipate up to 35.7W of power and operates over a junction temperature range of -55°C to 150°C.
The FCPF400N80Z is housed in a TO-220-3 Full Pack package (also known as TO-220F-3), which provides full isolation for through-hole mounting. This package simplifies heatsinking and improves reliability in power supply designs.
Typical applications include switch-mode power supplies, AC-DC converters, inverters, and motor control circuits where high efficiency and ruggedness are required.
The maximum drain-source voltage is 800V.
The maximum continuous drain current is 11A at case temperature.
The maximum on-resistance is 400mOhm at 10V gate voltage and 5.5A drain current.
The maximum gate threshold voltage is 4.5V at 1.1mA drain current.
The device is available in TO-220-3 Full Pack (TO-220F-3) through-hole package.
The junction temperature range is -55°C to 150°C.
The component is marked as RoHS3 Compliant, but this status is unverified.