| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCPF380N60E-F154 is an N-Channel power MOSFET manufactured by ON Semiconductor. It utilizes MOSFET (Metal Oxide) technology and is designed for high-voltage switching applications.
This device features a maximum drain-to-source voltage (Vdss) of 600 V and a continuous drain current of 10.2 A at Tj. The on-resistance (Rds(on)) is a maximum of 380 mOhm at a gate-source voltage of 10 V and drain current of 5 A. The gate threshold voltage is 3.5 V maximum at 250 µA. The maximum gate charge is 45 nC at Vgs = 10 V, and the input capacitance is 1770 pF at Vds = 25 V.
The MOSFET is housed in a TO-220-3 Full Pack package (also known as TO-220F-3) with through-hole mounting. It can operate over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 31 W at case temperature. The device is RoHS compliant.
The maximum drain-to-source voltage (Vdss) is 600 V.
The device is available in a TO-220-3 Full Pack (TO-220F-3) through-hole package.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS compliant.
The maximum on-resistance is 380 mOhm at a gate-source voltage of 10 V and drain current of 5 A.
The maximum gate charge (Qg) is 45 nC at Vgs = 10 V.
The continuous drain current (Id) is 10.2 A at junction temperature.