| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCPF380N60-F154 is an N-Channel power MOSFET from ON Semiconductor, designed for high-voltage switching applications. It features a maximum drain-source voltage of 600V and a continuous drain current of 10.2A at a junction temperature of 150°C. The device offers a low on-resistance of 380mOhm maximum at 5A drain current and 10V gate-source voltage, enabling efficient power conversion.
The MOSFET has a gate threshold voltage of 3.5V maximum at 250µA, and a maximum gate-source voltage rating of ±20V. Its input capacitance is 1665pF at 25V drain-source, and the total gate charge is 40nC at 10V, which influences switching performance. The maximum power dissipation is 31W at case temperature 25°C.
The device is housed in a TO-220-3 Full Pack package (supplier device package TO-220F-3) with through-hole mounting, suitable for PCB assembly. The operating junction temperature range is -55°C to 150°C. This MOSFET is suitable for applications such as power supplies, inverters, and motor control circuits where high voltage and moderate current handling are required.
600V.
10.2A at Tj=150°C.
380mOhm maximum at Id=5A, Vgs=10V.
3.5V maximum at Id=250µA.
-55°C to 150°C.
TO-220-3 Full Pack (TO-220F-3).
RoHS3 compliant (unverified).