| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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42,000 pcs
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42000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCPF380N60-F152 is a 600V N-Channel MOSFET from ON Semiconductor, part of the SuperFET II family utilizing charge balance technology for low on-resistance and gate charge. It delivers a continuous drain current of 10.2A at 25°C and features a maximum on-resistance of 380mOhm at 10V gate drive. The device is designed for high-efficiency power conversion applications such as AC-DC power supplies, solar inverters, and LCD/LED/PDP TV lighting.
Key electrical characteristics include a typical gate charge of 30nC, input capacitance of 1665pF, and a single pulsed avalanche energy rating of 211.6mJ. The MOSFET is housed in a TO-220-3 Full Pack package (TO-220F-3) with through-hole mounting, offering a junction-to-case thermal resistance of 4°C/W and a maximum power dissipation of 31W at 25°C case temperature.
The device is 100% avalanche tested and capable of withstanding extreme dv/dt rates, making it suitable for robust switching applications. Operating temperature range is -55°C to 150°C.
The maximum drain-source voltage (Vdss) is 600V.
It is available in a TO-220-3 Full Pack package (supplier device package TO-220F-3) with through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 Compliant, but this status is unverified and should be confirmed with the manufacturer.
The maximum on-resistance (Rds(on)) is 380mOhm at a gate-source voltage of 10V and drain current of 5A.
The maximum total gate charge (Qg) is 40nC at Vgs = 10V.
The single pulsed avalanche energy (EAS) is 211.6mJ.