| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
748 pcs
|
748 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCPF36N60NT is an N-Channel MOSFET manufactured by On Semiconductor. It employs Metal Oxide (MOSFET) technology and is designed for high-voltage switching applications.
Key electrical specifications include a drain-to-source voltage (Vdss) of 600V, a continuous drain current (Id) of 36A at case temperature (Tc), and a maximum on-resistance (Rds(on)) of 90mOhm at Id=18A and Vgs=10V. The typical gate charge (Qg) is 112nC at Vgs=10V, and input capacitance (Ciss) is 4785pF at Vds=100V. The gate threshold voltage (Vgs(th)) is 4V maximum at Id=250µA, and the recommended drive voltage for specified on-resistance is 10V. The maximum gate-source voltage is ±30V.
The device is through-hole mounted and comes in a TO-220-3 Full Pack package (also known as TO-220F-3). It has an operating junction temperature range of -55°C to 150°C.
The maximum drain-source voltage (Vdss) is 600 V.
The continuous drain current (Id) is 36 A at case temperature (Tc).
The maximum drain-source on-resistance (Rds(on)) is 90 mOhm at Id=18A and Vgs=10V.
The operating junction temperature range is -55°C to 150°C.
The device is available in a TO-220-3 Full Pack (TO-220F-3) through-hole package.
It is marked as RoHS3 compliant, but this information is unverified and has low confidence.