| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The FCPF360N65S3R0L is an N-Channel power MOSFET from On Semiconductor's SUPERFET III Easy Drive family. It utilizes super-junction charge balance technology to achieve low on-resistance and low gate charge, minimizing conduction and switching losses. The device is rated for a maximum drain-source voltage of 650V and a continuous drain current of 10A at 25°C case temperature, with a maximum on-resistance of 360mΩ at 10V gate drive.
This MOSFET is designed for ease of use with a typical gate charge of only 18nC and a gate threshold voltage range that allows direct drive from standard logic levels. It features a maximum power dissipation of 27W and is capable of withstanding high dv/dt rates up to 100V/ns. The device is 100% avalanche tested, with a single-pulse avalanche energy rating of 40mJ.
The FCPF360N65S3R0L is packaged in a TO-220F-3 full-pack through-hole package, providing isolation and ease of mounting. It is suitable for a variety of power supply applications including computing, telecom, server, and industrial power supplies, as well as lighting, charger, and adapter designs. The device is Pb-Free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $1.42 | $1.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 650V.
The continuous drain current is 10A at Tc=25°C and 6A at Tc=100°C.
The maximum on-resistance is 360mΩ at Vgs=10V and Id=5A. Typical on-resistance is 310mΩ.
It is available in a TO-220-3 Full Pack through-hole package (supplier device package TO-220F-3).
The operating junction temperature range is -55°C to 150°C.
Yes, the device is Pb-Free and RoHS compliant as stated in the datasheet.
The maximum total gate charge is 18nC at Vgs=10V.