| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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56,000 pcs
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56000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FCPF290N80 is an N-Channel MOSFET from onsemi's SuperFET II family, designed for high-voltage switching power applications. It features a maximum drain-source voltage of 800V and continuous drain current of 17A at 25°C. The device offers low on-resistance with a typical value of 245 mOhm and maximum of 290 mOhm at 10V gate drive. Ultra low gate charge (58 nC typical) and low effective output capacitance (240 pF typical) enable efficient high-frequency switching. The MOSFET is 100% avalanche tested with a single pulsed avalanche energy rating of 882 mJ. It is housed in a TO-220-3 Full Pack (TO-220F) through-hole package, suitable for applications such as AC-DC power supplies, LED lighting, PFC circuits, server/telecom power, and FPD TV power. The device is RoHS compliant and Pb-Free.
-55°C to 150°C (junction temperature).
TO-220-3 Full Pack (TO-220F) through-hole package.
Yes, RoHS compliant and Pb-Free.
800 V.
17 A.
245 mOhm typical, 290 mOhm maximum at 10V gate drive.
58 nC typical, 75 nC maximum at 10V.