FCPF250N65S3R0L The FCPF250N65S3R0L is a 650V, 12A N-Channel Power MOSFET from On Semiconductor's SUPERFET III family. It features low on-resistance (250mOhm max) and low gate charge (24nC typical) in a TO-220F-3 through-hole package.
Mfr Part #:

FCPF250N65S3R0L

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FCPF250N65S3R0L is a 650V, 12A N-Channel Power MOSFET from On Semiconductor's SUPERFET III family. It features low on-resistance (250mOhm max) and low gate charge (24nC typical) in a TO-220F-3 through-hole package.
Total Stock: 94,000 pcs

FCPF250N65S3R0L Available from 1 distributor

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FCPF250N65S3R0L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Avalanche Current
Current
Drain Current (Maximum @ Tc=100 °C)
Drain Current (Maximum @ pulsed)
Drain to Source Voltage (Vdss)
Drain-Source On-Resistance (Typical/Max @ Id=6A, Vgs=10V)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Gate Charge (Typical) @ Vgs = 10V
Input Capacitance (Ciss) (Max) @ Vds
MOSFET dv/dt
Mounting Type
Operating Temperature
Output Capacitance (Effective) (Typical)
Peak Diode Recovery dv/dt
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Single Pulsed Avalanche Energy
Supplier Device Package
Technology
Termination Style
Thermal Resistance Junction to Ambient (Max)
Thermal Resistance, Junction to Case (Max)
Vgs (Max)
Vgs(th) (Max) @ Id

FCPF250N65S3R0L Description

Short technical summary and product information.

The FCPF250N65S3R0L is an N-Channel Power MOSFET manufactured by ON Semiconductor, part of the SUPERFET III family with Easy Drive technology. This device is designed for high efficiency power conversion applications.

 

Key electrical specifications include a drain-source breakdown voltage of 650V, continuous drain current of 12A at 25°C (7.6A at 100°C), and a maximum drain-source on-resistance of 250mOhm (typical 210mOhm at Id=6A, Vgs=10V). The gate threshold voltage is 4.5V max, and the gate charge is typically 24nC at Vgs=10V. Input capacitance is 1010pF max at Vds=400V, and output capacitance is 248pF typical.

 

The device is 100% avalanche tested with single pulse avalanche energy of 57mJ and avalanche current of 2.3A. It can withstand high dv/dt rates up to 100V/ns. The operating junction temperature range is -55°C to 150°C.

 

The FCPF250N65S3R0L is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, providing electrical isolation. It is RoHS compliant and Pb-Free. Typical applications include computing and display power supplies, telecom and server power supplies, industrial power supplies, and lighting/charger/adapter circuits.

FCPF250N65S3R0L Quick Information

Product Type: Power MOSFET
Series: Easy Drive
Canonical Name: On Semiconductor FCPF250N65S3R0L N-Channel MOSFET 650V 12A TO-220F-3
Subcategory: Single MOSFET

FCPF250N65S3R0L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FCPF250N65S3R0L Features

  • 650V drain-source breakdown voltage.
  • 12A continuous drain current at 25°C.
  • Low on-resistance of 250 mOhm max.
  • Ultra low gate charge of 24 nC.
  • 100% avalanche tested for reliability.

FCPF250N65S3R0L Applications

  • Computing and display power supplies.
  • Telecom and server power supplies.
  • Industrial power supplies.
  • Lighting, charger, and adapter circuits.

FCPF250N65S3R0L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FCPF250N65S3R0L?

The drain-source voltage rating is 650 V.

What package does the FCPF250N65S3R0L come in?

It comes in a TO-220-3 Full Pack package (TO-220F-3).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the FCPF250N65S3R0L RoHS compliant?

Yes, it is RoHS3 compliant as per the datasheet.

What is the typical gate charge?

Typical gate charge is 24 nC at Vgs=10V.

What is the maximum drain-source on-resistance?

Maximum on-resistance is 250 mOhm at Id=6A, Vgs=10V.

What is the single pulse avalanche energy rating?

57 mJ at IAS=2.3A, starting junction temperature 25°C.

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